r07ds0134ej0500 rev.5.00 page 1 of 7 sep 15, 2010 preliminary datasheet bcr08as-12a triac low power use features ? i t (rms) : 0.8 a ? v drm : 600 v ? i fgti , i rgti , i rgt iii : 5 ma ? i fgt iii : 10 ma ? non-insulated type ? planar passivation type ? surface mounted type ? completed pb free outline renesas package code: plzz 000 4 c a-a ( package name: u pak ) 2 4 1 3 renesas package code lzz0004cb-a ( package name: sot 2, 4 1 3 1. t 1 terminal 2. t 2 terminal 3. gate terminal 4. t 2 terminal 2 1 3 ode: ode: pl pl ot-89 ot-89 ) ) 4 4 ol ol ol ol ol p o applications hybrid ic, solid state relay, electric fan, washing m achine, and other general purpose control applications maximum ratings voltage class parameter symbol 12 (mark bf) unit repetitive peak off-state voltage note1 v drm 600 v non-repetitive peak off-state voltage note1 v dsm 720 v parameter symbol ratings unit conditions rms on-state current i t (rms) 0.8 a commercial frequency, sine full wave 360 conduction, ta = 40 ?c note3 surge on-state current i tsm 8 a 60hz sinewave 1 full cycle, peak value, non-repetitive i 2 t for fusing i 2 t 0.26 a 2 s value corresponding to 1 cycle of half wave 60hz, surge on-state current peak gate power dissipation p gm 1 w average gate power dissipation p g (av) 0.1 w peak gate voltage v gm 10 v peak gate current i gm 1 a junction temperature tj ? 40 to +125 ?c storage temperature tstg ? 40 to +125 ?c mass ? 50 mg typical value notes: 1. gate open. r07ds0134ej0500 (previous: rej03g0292-0400) rev.5.00 sep 15, 2010
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 2 of 7 sep 15, 2010 electrical characteristics parameter symbol min. typ. max. unit test conditions repetitive peak off-state current i drm ? ? 2.0 ma tj = 125 ?c, v drm applied on-state voltage v tm ? ? 2.0 v tc = 25 ?c, i tm = 1.2 a, instantaneous measurement ? v fgt ? ? ? 2.0 v ?? v rgt ? ? ? 2.0 v ??? v rgt ??? ? ? 2.0 v gate trigger voltage note2 ?v v fgt ??? ? ? 2.0 v tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? ? i fgt ? ? ? 5 ma ?? i rgt ? ? ? 5 ma ??? i rgt ??? ? ? 5 ma gate trigger current note2 ?v i fgt ??? ? ? 10 ma tj = 25 ?c, v d = 6 v, r l = 6 ? , r g = 330 ? gate non-trigger voltage v gd 0.1 ? ? v tj = 125 ?c, v d = 1/2 v drm thermal resistance r th (j-a) ? ? 65 ? c/w junction to ambient note3 critical-rate of rise of off-state commutating voltage note4 (dv/dt)c 0.5 ? ? v/ ? s tj = 125 ?c notes: 2. measurement usi ng the gate trigger characteristics measurement circuit. 3. soldering with ceramic plate (25 mm ? 25 mm ? t0.7 mm). 4. test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below. test conditions commutating voltage and current waveforms (inductive load) 1. junction temperature tj = 125 ?c 2. rate of decay of on-state commutating current (di/dt)c = ? 0.4 a/ms 3. peak off-state voltage v d = 400 v supply voltage time time time main current main voltage (di/dt)c v d (dv/dt)c
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 3 of 7 sep 15, 2010 performance curves maximum on-state characteristics on-state voltage (v) on-state current (a) rated surge on-state current conduction time (cycles at 60hz) surge on-state current (a) gate characteristics gate current (ma) gate voltage (v) gate trigger voltage vs. junction temperature junction temperature (c) gate trigger voltage (tj = tc) gate trigger voltage (tj = 25c) 100 (%) gate trigger current vs. junction temperature junction temperature (c) gate trigger current (tj = tc) gate trigger current (tj = 25c) 100 (%) maximum transient thermal impedance characteristics (junction to ambient) conduction time (cycles at 60hz) transient thermal impedance (c/w) 10 ? 1 10 1 7 5 3 2 012 10 0 7 5 3 2 3 45 4 4 10 0 2 5 10 1 4 2 3 7 10 2 4 2 5 3 74 6 8 10 0 10 0 23 10 0 57 10 1 23 57 10 2 23 57 10 3 10 2 7 5 3 2 10 1 7 5 3 2 7 5 3 2 10 ? 1 v gt 10 1 10 3 7 5 3 2 ?60 ? 20 20 10 2 7 5 3 2 6 0100 140 4 4 ?400 4 0 80 120 i v rgt v rgt iii i v fgt v fgt iii 10 1 10 3 7 5 3 2 ?60 ? 20 20 10 2 7 5 3 2 6 0100 140 4 4 ?400 4 080 120 10 1 23 10 ?1 57 10 0 23 57 10 1 23 57 10 2 10 3 7 5 3 2 10 2 7 5 3 2 7 5 3 2 10 0 23 10 2 57 10 3 23 57 10 4 23 57 10 5 junction to ambient * * 25mm 25mm t0.7mm ceramic plate tj = 25 c tj = 125 c typical example v gm = 10v i gm = 1a v gd = 0.2v i fgt i , i fgt iii i rgt i , i rgt iii p gm = 1w p g(av) = 0.1w i fgt i , i rg t iii , i rgt i i fgt iii typical example
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 4 of 7 sep 15, 2010 on-state power dissipation (w) rms on-state current (a) maximum on-state power dissipation rms on-state current (a) ambient temperature (c) allowable ambient temperature vs. rms on-state current junction temperature (c) rep eti t ive peak o ff-state c u rrent ( tj = t c) rep eti t ive peak o ff-state c u rrent ( tj = 2 5c) 100 ( % ) repetitive peak off-state current vs. junction temperature holding current vs. junction t emperature junction temperature (c) holding current (tj = tc) holding current (tj = 25c) 100 (%) latching current (ma) latching current vs. junction temperature junction temperature (c) 2.0 1.6 1.2 0.8 0.4 0 2.0 00 .4 0.81 .2 1.6 160 120 100 60 20 0 1.6 00 .20 .6 1.01 .4 40 80 140 0.4 0.8 1.2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 160 100 80 40 20 0 140 40 ?40 ?60 ? 20 0 20 6 080 140 100120 60 120 140 40 ?40 ? 60 ? 20 0 20 6 0 80 100 120 10 5 7 5 3 2 10 4 7 5 3 2 10 3 7 5 3 2 10 2 140 40 ?40 ?60 ? 20 0 20 6 0 80 100 120 160 ? 400 4 080 120 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 ? 1 typical example typical example distribution breakover voltage vs. junction temperature junction temperature (c) breakover voltage (tj = tc) breakover voltage (tj = 25c) 100 (%) 360 conduction resistive, inductive loads c u r v e s a pply regard l e ss o f condu cti on angl e resist ive, indu ctive loads n atu ral conv ecti on typical example t 2 + , g ? typical example t 2 + , g + t 2 ? , g ? t 2 ? , g + typical example ? ? ? 25mm 25mm t0.7mm ceramic plate
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 5 of 7 sep 15, 2010 rate of rise of off-state voltage (v/s) breakover voltage (dv/dt = xv/s) breakover voltage (dv/dt = 1v/s) 100 (%) breakover voltage vs. rate of rise of off-state voltage commutation characteristics critical rate of rise of off-state commutating voltage (v/s) rate of decay of on -state commutating current (a/ms) gate trigger current (t w) gate trigger current ( dc) 100 (%) gate current pulse width (s) gate trigger current vs. gate current pulse width test procedure i test procedure iii test procedure iv test procedure ii gate trigger characteristics test circuits 23 10 0 57 10 1 23 57 10 2 23 57 10 3 120 0 20 40 60 80 100 140 160 10 ?1 23 57 10 0 10 0 7 5 3 2 23 57 10 1 10 1 7 5 3 2 10 ?1 10 1 10 3 7 5 3 2 10 0 2 5 10 1 10 2 7 5 3 2 3 7 10 2 4 4 4 2 5 3 7 4 6 6 6 6 6v 6v 6v 6v 330 330 330 330 a v a v a v a v typical example tj = 125c i quadrant iii quadrant min i m u m c h aracterist i c s v a lue i quadrant iii quadrant typical example tj = 125c i t = 1a = 500 s v d = 200 v typical example i fgt i i fgt iii i rgt i i rgt iii
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 6 of 7 sep 15, 2010 package dimensions 4.5 0.1 1.8 max 1.5 0.1 0.44 max 0.44 max 0.48 max 0.53 max 1.5 1.5 3.0 2.5 0.1 4.25 max 0.8 min 1 0.4 (1.5) (2.5) (0.4) (0.2) previous code plzz0004ca- aupa k / upakv mass[typ.] 0.050g sc-62 renesas code jeita package code unit: mm package name upak sc -62 0 .4 8g ma ss [typ. ] ? p lzz0004 c b-a rene s a s c ode jeita package c ode previous c ode unit: mm 4.6max 0.48max 0.58max 3.0 1.5 4.2ma 2.5 1.6 0.2 0.4 +0.03 ?0.05 p acka g e name so t- 89 eol pkg l p ol ol l ol ol l l ol l ol l l l k k k pk p p p pk pk pk pk p p p p o ol o o o o k kg pk k k ol ol ol ol l l l l l l o k k k k k k o o o o o o max 0 . 8 min n 5 5 0 .1 0.1 1 .5 1.5 0 . 1 0.1
bcr08as-12a preliminary r07ds0134ej0500 rev.5.00 page 7 of 7 sep 15, 2010 order code lead form standard packing quantity standard order code standard order code example surface-mounted type taping 4000 type name ?t +direction (1 or 2)+4 bcr08as-12a-t14 note : please confirm the specificat ion about the shipping in detail.
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